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Advance Technical Information
TrenchT2 TM HiperFET TM
Power MOSFET
IXFA230N075T2-7
V DSS
I D25
R DS(on)
= 75V
= 230A
≤ 4.2m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263 (7-lead)
Symbol
V DSS
V DGR
V GSM
I D25
I LRMS
I DM
I A
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
T C = 25 ° C (Chip Capability)
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
Maximum Ratings
75
75
± 20
230
160
700
115
V
V
V
A
A
A
A
1
7
Pins: 1 - Gate
2, 3 - Source
5,6,7 - Source
Tab (8) - Drain
Tab
E AS
P D
T J
T JM
T stg
T L
T sold
Weight
T C = 25 ° C
T C = 25 ° C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
TO-263
850
480
-55 ... +175
175
-55 ... +175
300
260
3
mJ
W
° C
° C
° C
° C
° C
g
Features
International Standard Package
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low R DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 250 μ A
V GS(th) V DS = V GS , I D = 1mA
Characteristic Values
Min. Typ. Max.
75
2.0 4.0
V
V
Automotive
- Motor Drives
- 12V Power Bus
- ABS Systems
DC/DC Converters and Off-Line UPS
I GSS
I DSS
V GS = ± 20V, V DS = 0V
V DS = V DSS , V GS = 0V
T J = 150 ° C
± 200 nA
25 μ A
250 μ A
Primary- Side Switch
High Current Switching Applications
R DS(on)
V GS = 10V, I D = 50A, Notes 1& 2
4.2 m Ω
? 2010 IXYS CORPORATION, All Rights Reserved
DS100244(03/10)
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